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    吕雪芹


    副教授

    联系电话:0592-2187173

    电子邮件:xqlv@xmu.edu.cn

    地址:厦门大学亦玄馆409室

     

    2010年毕业于中国科学院半导体研究所,获微电子学与固体电子学专业工学博士学位。同年加入厦门大学萨本栋微米纳米科学技术研究院,现任职副教授。

    研究兴趣

    半导体光电材料的制备和性能表征;光栅外腔半导体激光器的研制、性能表征和应用研究;GaN基共振腔发光二极管的研制和性能优化。

    招生方向

    物理、光学、半导体材料、微电子学与固体电子学

    科研项目

    国家自然科学基金面上项目:“氮化镓基共振腔发光管研究”,2016-2019

    国家自然科学基金青年项目:“GaN基外腔可调谐半导体激光器研究”,2014-2016

    福建省自然科学基金青年项目:“InGaN量子阱载流子输运及复合机理研究”,2013-2015

    主要文章

    1. M. M. Liang, G. E. Weng, J. Y. Zhang, X. M. Cai, X. Q. Lv, L. Y. Ying and B. P. Zhang*, “Influence of barrier thickness on the structural and optical properties of InGaN/GaN multiple quantum well”, Chinese Physics B, 23 (5), 054211 (2014).

    2. L. Sun, G. E. Weng, M. M. Liang, L. Y. Ying, X. Q. Lv, J. Y. Zhang, B. P. Zhang, “Influence of p-GaN annealing on the optical and electrical properties of InGaN/GaN MQW LEDs”, Physica E, 60, 166-169 (2014).

    3. X. Q. Lv, P. Jin, H. M. Chen, Y. H. Wu, F. F. Wang, and Z. G. Wang, “Broadband light emission from chirped multiple InAs quantum dot structure”, Chinese Physics Letters, 30 (11), 118102 (2013).

    4. X. Q. Lv, S. W. Chen, J. Y. Zhang, L. Y. Ying, and B. P. Zhang, “Tuning properties of external cavity violet semiconductor laser”, Chinese Physics Letters, 30 (7), 074204 (2013).

    5. X. M. Cai, Y. Wang, Z. D. Li, X. Q. Lv, J. Y. Zhang, L. Y. Ying, and B. P. Zhang, “Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers”, Applied Physics A, (2013).

    6. G. E. Weng, B. P. Zhang, M. M. Liang, X. Q. Lv, J. Y. Zhang, L. Y. Ying, Z. R. Qiu, H. Yaguchi, S. Kuboya, K. Onabe, S. Q. Chen, and H. Akiyama, “Optical properties and carrier dynamics in asymmetric coupled InGaN multiple quantum wells”, Functional Materials Letters, 6, 1350021 (2013).

    7. X. Q. Lv, J. Y. Zhang, L. Y. Ying, W. J. Liu, X. L. Hu, B. P. Zhang, Z. R. Qiu, S. Kuboya, and K. Onabe, “Well-width dependence of the emission-linewidth in ZnO/MgZnO quantum wells”, Nanoscale Research Letters, 7, 605 (2012).

    8. X. K. Li, P. Jin, Q. An, Z. C. Wang, X. Q. Lv, H. Wei, J. Wu, J. Wu, and Z. G. Wang, “Experimental investigation of wavelength-selective optical feedback for a high-power quantum dot superluminescent device with two-section structure”, Optics Express, 20 (11), 11936-11943 (2012).

    9. X. K. Li, P. Jin, Q. An, Z. C. Wang, X. Q. Lv, H. Wei, J. Wu, J. Wu, and Z. G. Wang, “Improved continuous-wave performance of two-section quantum-dot superluminescent diodes by using epi-down mounting process”, IEEE Photonics Technology Letters, 24 (14), 1188-1190 (2012).

    10. X. L. Hu, W. J. Liu, G. E. Weng, J. Y. Zhang, X. Q. Lv, M. M. Liang, M. Chen, H. J. Huang, L. Y. Ying, and B. P. Zhang. “Fabrication and characterization of high-quality factor GaN-based resonant-cavity blue light-emitting diodes”, IEEE Photonics Technology Letters, 24 (17) 1472-1474, (2012).

    11. X. Q. Lv, J. Y. Zhang, W. J. Liu, X. L. Hu, M. Chen, and B. P. Zhang, “Optical properties of ZnO/MgZnO quantum wells with graded thickness”, Journal of Physics D: Applied Physics, 44, 365401 (2011).

    12. J. Wu, X. Q. Lv, P. Jin, X. Q. Meng, and Z. G. Wang, “Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device”, Chinese Physics B, 20 (6), 064202 (2011).

    13. Z. C. Wang, P. Jin, X. Q. Lv, X. K. Li, and Z. G. Wang, “High-power quantum dot superluminescent diode with integrated optical amplifier section”, Electronics Letters, 47 (21), 1191-1193 (2011).

    14. X. K. Li, P. Jin, Q. An, Z. C. Wang, X. Q. Lv, H. Wei, J. Wu, J. Wu, and Z. G. Wang, “A high-performance quantum dot superluminescent diode with a two-section structure”, Nanoscale Research Letters, 6, 625 (2011).

    15. X. Q. Lv, P. Jin, and Z. G. Wang, “Broadly tunable grating-coupled external cavity laser with quantum-dot active region”, IEEE Photonics Technology Letters, 22 (24), 1799-1801 (2010).

    16. X. Q. Lv, P. Jin, W. Y. Wang, and Z. G. Wang, “Broadband external cavity tunable quantum dot lasers with low injection current density”, Optics Express, 18 (9), 8916-8922 (2010).

    17. X. Q. Lv, P. Jin, and Z. G. Wang, “A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission”, Chinese Physics B, 19 (1), 018104 (2010).

    18. Z. Y. Zhang, R. A. Hogg, X. Q. Lv, and Z. G. Wang, “Self-assembled quantum-dot superluminescent light-emitting diodes”, Advances in Optics and Photonics, 2, 201-228 (2010).

    19. X. Q. Lv, N. Liu, P. Jin, and Z. G. Wang, “Broadband emitting superluminescent diodes with InAs quantum dots in AlGaAs matrix”, IEEE Photonics Technology Letters, 20 (20), 1742-1744 (2008).

     

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